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| e PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics 26 Volt, 1.9 GHz Characterization - Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 25 Output Power (Watts) 20 15 10 201 91 LOT COD E VCC = 26 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ICQ = 100 mA f = 1.9 GHz Input Power (Watts) Package 20226 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage (emitter open) Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCEO VCBO VEBO IC PD Value 20 50 4.0 2.8 60 0.34 -40 to +150 2.90 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20191 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to B Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA, RBE = 27 IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 200 mA VCB = 26 V, IE = 0 A, f = 1 MHx Symbol V(BR)CER V(BR)CBO V(BR)EBO hFE Cob Min 50 50 4 20 -- Typ -- -- -- -- 7 Max -- -- -- 100 -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) Output Power at 1 dB Compression (VCC = 26 Vdc, ICQ = 100 mA, f = 1.9 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 15 W(PEP), ICQ = 100 mA, f1 = 1.899 GHz, f2 = 1.901 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA, f = 1.9 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C IMD Min 8.0 10 35 -30 Typ 10.0 12 40 -32 Max -- -- -- -- Units dB Watts % dBc -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 12 W, ICQ = 100 mA) Z Source Z Load Frequency GHz 1.80 1.85 1.90 R 10.0 9.1 8.1 Z Source jX -4.2 -3.1 -2.0 R 2.6 2.2 1.6 Z Load jX 0.9 1.2 1.4 Z0 = 50 2 5/19/98 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 14 12 60 50 PTB 20191 Efficiency vs. Output Power Efficiency (%) Gain (dB) 10 8 6 4 2 1.75 40 30 20 10 VCC = 26 V ICQ = 100 mA Pout = 12 W 1.8 1.85 1.9 1.95 VCC = 26 V ICQ = 100 mA f = 1.9 GHz 0 0 4 8 12 16 20 Frequency (GHz) Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20191 Uen Rev. C 09-28-98 3 |
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